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[1]马志斌,陶利平,翁国峰,等.微波等离子体化学气相沉积金刚石光谱分析[J].武汉工程大学学报,2012,(06):49-52.[doi:103969/jissn16742869201206012]
 MA Zhi\|bin,TAO Li\|ping,WENG Guo\|feng,et al.Spectroscopic analysis of microwave plasma for chemical vapor deposition diamond [J].Journal of Wuhan Institute of Technology,2012,(06):49-52.[doi:103969/jissn16742869201206012]
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微波等离子体化学气相沉积金刚石光谱分析(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2012年06期
页码:
49-52
栏目:
资源与土木工程
出版日期:
2012-06-30

文章信息/Info

Title:
Spectroscopic analysis of microwave plasma for
chemical vapor deposition diamond
文章编号:
16742869(2012)06004904
作者:
马志斌陶利平翁国峰严垒
武汉工程大学材料科学与工程学院,湖北省等离子体化学与新材料重点实验室,湖北 武汉 430074
Author(s):
MA Zhi\|binTAO Li\|pingWENG Guo\|fengYAN lei
School of Materials Science and Engineering,Wuhan Institute of Technology,Key of Laboratory of
Plasma Chemistry and Advanced Materials of Hubei Province,Wuhan 430074,China
关键词:
等离子体光谱金刚石基团空间分布甲烷浓度
Keywords:
optical emission spectroscopy diamond radicals space distribution methane concentration
分类号:
TL65
DOI:
103969/jissn16742869201206012
文献标志码:
A
摘要:
采用等离子体光谱分析微波等离子体化学气相(MPCVD)沉积金刚石过程中基团的空间分布及甲烷浓度变化时基团浓度的变化情况.实验过程中分别测量了氢原子的Hα (656.19 nm)、Hβ(486.71 nm)和Hγ(434.56 nm)谱线,以及基团CH(431.31 nm)、C2(515.63 nm)谱线.结果表明:氢原子和基团CH、C2的浓度沿等离子体柱的径向先增加再减小.随着甲烷浓度逐步增加,氢原子及基团CH、C2的浓度相应增加,其中C2基团所受影响最大.
Abstract:
Optical emission spectroscopy was used to analyse the space distribution and variation with methane concentration of the radicals,which appeared in the microwave plasma for diamond deposition.In experiment,Hα(656.19 nm),Hβ(486.71 nm)and Hγ(434.56 nm) of atomic hydrogen and radicals of CH(431.31 nm) and C2(515.63 nm) were measured respectively.The results show that the intensities of atomic hydrogen and radicals of CH and C2 increase and then decrease along the radical direction of the plasma column,the intensities of atomic hydrogen and radicals of CH and C2 increase with the increasing of the methane concentration,in which the radical C2 is effected most.

参考文献/References:

[1]Hugh O Pierson.Handbook of chemical vapor deposition(CVD)[M].Second Edition.New York: Noyes Publications,1999: 194-205.
[2]李恒德,马春来.材料科学与工程国际前沿[M].山东:山东科学技术出版社,2003:328-370.
[3]Seiichiro Matsumoto,Yoichiro Sato,Masayuki Tsutsumi.Growth of diamond particles from methane-hydrogen gas[J] .Journals of Matericals Science,1982,11(17):3106-3112.
[4]Jingbiao Cui,Rongchuan Fang.Characterization of the diamond growth process using optical emission spectroscopy[J]. Journal of Applied Physics,1997,81(6):2856-2862.
[5]Chiang M J,Hon M H.Optical emission spectroscopy study of positive direct current bias enhanced diamond nucleation[J] .Thin Solid Films,2008,516(15):4765-4770.
[6]Baránková H,Bárdo L.Studies of the optical emission from a hydrogen-hydrocarbon r.f. plasma jet stream during diamond film depositon [J].Diamond & Related Materials,1993,2 (2-4) : 347-352.
[7]Liao Y,Li C H,Ye Z Y,et al. Analysis of optical emission spectroscopy in diamond chemical vapor depositon[J].Diamond & Related Materials,2000,9(9-10):1716-1721.
[8]王启亮.MPCVD法制备多晶和单晶金刚石及性质研究[D].吉林:吉林大学凝聚态物理系,2009.
[9]Paul C Redfern.Theoretical studies of growth of diamond (110) from dicarbon[J].The Journal of Physical Chemistry,1996,100(28):11654-11663.
[10]J R 罗思.工业等离子体工程第Ⅰ卷基本原理[M].北京:科学出版社,1998:318-350.
[11]Zhou Haiyang,Jun Watanabe,Masato Miyake,et al. Optical and mass spectroscopy measurements of Ar/CH4/H2 micowave plasma for nano-crystalline diamond film deposition[J].Diamond & related Materials,2007,16(4-7 ) :675-678.
[12]Luque J,Juchmann W,Brinkman E A,et al. Excited state density distributions of H,C,C2 ,and CH by spatially optical emission in a diamond depositing dc-arcjet reactor[J].Journal of Vacuum Science and Technology.A:Vacuum ,Surfaces and Films,1998,16 (2):397-408.
[13]Vandevelde T ,Nesladek M ,Quaeyhaegens C,et al.Optical emission spectroscopy of the plasma during CVD diamond growth with nitrogen addition[J].Thin Solid Films,1996,290 -291: 143-147.
[14]翁国峰,湛玉龙,陶利平.高压微波氢等离子体Balmer线系的实验[J].武汉工程大学学报,2011,33(7):73-76.
[15]Han J C,Chao Ye,Masako suto,et al.Fluorescence from photoexcitation of C2H2 at 50-106 nm[J].Journal of Chemical Physics,1989,90(8):4000-4007.
[16]Deutsch H,Becker K,Matt S.Theoretical determination of absolute electron-impact ionization cross sections of molecules[J].International Journal of Mass Spectrometry,2000,197:37-69.
[17]黄元盛,罗承萍,邱万奇,化学气相沉积金刚石薄膜的晶体缺陷和杂质[J].中国表面工程,2004(1):5-9.
[18]满卫东,谢鹏,汪建华,等.甲烷浓度对批量生产金刚石涂层刀片的影响[J]. 硬质合金,2008,25(3):154-157.
[19]满卫东,孙蕾,汪建华,等.微波CVD金刚石薄膜作CVD散热片的制备[J].材料导报,2007,21(11A):316-318.

相似文献/References:

[1]王凡生,刘 繁*,汪建华,等.金刚石半导体器件的研究进展[J].武汉工程大学学报,2020,42(05):518.[doi:10.19843/j.cnki.CN42-1779/TQ.202002011]
 WANG Fansheng,LIU Fan*,WANG Jianhua,et al.Review of Diamond Semiconductor Devices[J].Journal of Wuhan Institute of Technology,2020,42(06):518.[doi:10.19843/j.cnki.CN42-1779/TQ.202002011]

备注/Memo

备注/Memo:
收稿日期:20120323基金项目:国家自然科学基金(10875093)作者简介:马志斌(1968-),男,湖北京山人,教授,博士.研究方向:低温等离子体技术及其应用.
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