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[1]陈志杰,潘天宇,徐源来,等.激光化学气相沉积法制备多层氧化铈缓冲层薄膜[J].武汉工程大学学报,2022,44(01):42-47.[doi:10.19843/j.cnki.CN42-1779/TQ.202107026]
 CHEN Zhijie,PAN Tianyu,XU Yuanlai,et al.Preparation of Multilayer Cerium Oxide Buffer-Layer Films by Laser Chemical Vapor Deposition[J].Journal of Wuhan Institute of Technology,2022,44(01):42-47.[doi:10.19843/j.cnki.CN42-1779/TQ.202107026]
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激光化学气相沉积法制备多层氧化铈缓冲层薄膜(/HTML)
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《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
44
期数:
2022年01期
页码:
42-47
栏目:
材料科学与工程
出版日期:
2022-02-28

文章信息/Info

Title:
Preparation of Multilayer Cerium Oxide Buffer-Layer Films by Laser Chemical Vapor Deposition
文章编号:
1674 - 2869(2022)01 - 0042 - 06
作者:
陈志杰12潘天宇3徐源来3赵 培 *123
1. 武汉工程大学材料科学与工程学院,湖北 武汉 430205;2. 等离子体化学与新材料湖北省重点实验室(武汉工程大学),湖北 武汉 430205;3. 绿色化工过程教育部重点实验室(武汉工程大学),湖北 武汉 430205
Author(s):
CHEN Zhijie12PAN Tianyu3XU Yuanlai3ZHAO Pei*123
1. School of Materials Science and Engineering,Wuhan Institute of Technology, Wuhan 430205, China;2. Hubei Key Laboratory of Plasma Chemical and Advanced Materials (Wuhan Institute of Technology), Wuhan 430205, China;3. Key Laboratory of Green Chemical Engineering Process (Wuhan Institute of Technology), Ministry of Education,Wuhan 430205,China
关键词:
氧化铈缓冲层薄膜激光化学气相沉积晶粒尺寸多层薄膜
Keywords:
CeO2 buffer-layer film laser chemical vapor deposition grain size multilayer films
分类号:
TB39
DOI:
10.19843/j.cnki.CN42-1779/TQ.202107026
文献标志码:
A
摘要:
为了增强第二代高温超导薄膜的载流性能,通过激光化学气相沉积法在镀有LaMnO3/MgO/Gd2Zr2O7复合涂层的哈氏C276合金基板上制备了2、3、4、5和6层氧化铈缓冲层薄膜。研究了氧化铈薄膜层数对薄膜相组成、结晶度、薄膜微观形貌和晶粒尺寸的影响。实验结果表明,制备出了单相(100)氧化铈薄膜。随着薄膜层数的增加,其面内取向变好。薄膜结晶度在2层时最低,在5层时最高。随着氧化铈薄膜层数从2层增加到6层,氧化铈薄膜的平均晶粒尺寸从28.98 nm增加到86.10 nm。氧化铈晶粒形状从大部分正方金字塔形变为相互正交的矩形棱台形并且晶粒间出现10~50 nm的孔洞。通过引入激光加速前驱体分解,2层氧化铈薄膜的厚度达到136 nm,薄膜沉积速率高达2.45 μm·h-1
Abstract:
To improve electrical properties of the second-generation high-temperature superconducting film, buffer-layer CeO2 films with 2,3,4,5 and 6 layers were prepared on Hastelloy C276 substrate coated with LaMnO3/MgO/Gd2Zr2O7 by laser chemical vapor deposition. Effects of the layers with different thickness on the phase composition, crystallite, microstructure and grain size of the film were investigated, respectively. The results show that CeO2 film with pure (100) preferred orientation is prepared. With increasing the layers’ thickness, the in-plane orientation of the CeO2 film is improved. The crystallinity of the CeO2 films is minimum at 2 layers and maximum at 5 layers. With increasing the layers’ number from 2 to 6, the average grain size of the CeO2 film increases from 28.98 to 86.10 nm; meanwhile, the shapes of the majority CeO2 grains change from pyramid to orthogonal rectangular prisms with a small number of holes about 10-50 nm scattered. By the introduction of laser, the decomposition rate of CeO2 precursor is improved effectively, as a result, the thickness of the 2-layed CeO2 film reaches 136 nm with the corresponding deposition rate of 2.45 μm· h-1.

参考文献/References:

[1] POLAT K. Cuprous oxide film sputtered on monolayer graphene for visible light sensitive heterogeneous photocatalysis[J]. Thin Solid Films,2020,709:138254:1-6. [2] YU J G, YANG B C, SHIN J W, et al. High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell[J]. Ceramics International,2019,45(3):3811-3815. [3] HUANG H J,QIU J H,WEI X W,et al. Ultra-fast fabrication of porous alumina film with excellent wear and corrosion resistance via hard anodizing in etidronic acid[J]. Surface & Coatings Technology,2020,393:125767:1-13. [4] RIM Y S. Review of metal oxide semiconductors-based thin-film transistors for point-of-care sensor applications [J]. Journal of Information Display,2020,21(4):203-210. [5] 李建昌,韩小波,姜永辉,等. 金属氧化物半导体薄膜气敏机理研究进展[J]. 功能材料与器件学报,2011,17(2):205-217. [6] AN X K, YANG C,WU Z Z, et al. Self-regulated super-hydrophobic Cu/CuO electrode film deposited by one-step high-power sputtering[J]. Advanced Electronic Materials,2019,6(1):1900891:1-6. [7] 刘盛友,刘长松,程千会. Al2O3超疏水薄膜的制备及其耐腐蚀性研究[J]. 表面技术,2017,46(12):238-244. [8] SCHLUPP M V F, KURLOV A, HWANG J, et al. Gadolinia doped ceria thin films prepared by aerosol assisted chemical vapor deposition and applications in intermediate-temperature solid oxide fuel cell[J]. Fuel Cells,2013,13(5):658-665. [9] KHAIRNAR A G,MAHAJAN A M. Sol-gel deposited ceria thin films as gate dielectric for CMOS technology[J]. Bulletin of Materials Science,2013,36(2):259-263. [10] FR?HLICH K, MACHAJDíK D, VáVRA I, et al. Growth of YBa2Cu3O7/CeO2/Al2O3 heteroepitaxial films by aerosol MOCVD[J]. Journal of Alloys and Compounds,1997,251:284-287. [11] NIE J C,YAMASAKI H,DEVELOS-BAGARINAO K,et al. Surface morphology and microstructure of thick YBa2Cu3O7-δ films on vicinal r-cut sapphire buffered with CeO2[J]. IEEE Transactions on Applied Superconductivity,2007,17(2):3459-3462. [12] LU Z,HISKES R,DICAROLIS S A,et al. Crystalline quality and surface morphology of (100) CeO2 thin films grown on sapphire substrates by solid source metalorganic chemical vapor deposition[J]. Journal of Crystal Growth,1995,156(3):227-234. [13] XU D,LIU L F,WANG Y,et al. Influence of CeO2-caplayer on the texture and critical current density of YBCO film[J]. Journal of Superconductivity and Novel Magnetism,2012,25(2):197-200. [14] DEVELOS-BAGARINAO K, YAMASAKI H,NAKAGAWA Y. Effect of surface modification of CeO2 buffer layers on JC and defect microstructures of large-area YBCO thin films[J]. Superconductor Science and Technology,2006,19(8):873-882. [15] ZHAO P,ITO A,GOTO T. Orientation control and electrical properties of YBa2Cu3O7-δ deposited onto CeO2 buffer films by laser chemical vapor deposition using liquid source precursors[J]. Thin Solid Films,2014,564:92-96. [16] ITO A,KADOKURA H,KIMURA T,et al. Texture and orientation characteristics of α-Al2O3 films prepared by laser chemical vapor deposition using Nd:YAG laser[J]. Journal of Alloys and Compounds,2010,489(2):469-474. [17] ZHAO P,ITO A,GOTO T. Rapid deposition of YBCO films by laser CVD and effect of lattice mismatch on their epitaxial growth and critical temperature[J]. Ceramics International,2013,39(7):7491-7497. [18] GUO D Y,ITO A,TU R,et al. High-speed epitaxial growth of BaTi2O5 thick films and their in-plane orientations[J]. Applied Surface Science,2012,259:178-185. [19] ZHAO P, ITO A, GOTO T. Preparation of (100) CeO2 and (110) YBa2Cu3O7-δ films by laser chemical vapor deposition[J]. Ceramics International,2014,40(1):605-609. [20] 李紫琪,赵培,刘莎,等. 化学气相沉积法制备碳化铬薄膜的研究[J]. 武汉工程大学学报,2021,43(2):181-186,191. [21] LO NIGRO R,MALANDRINO G,FRAGALà I L. Metalorganic chemical vapor deposition of CeO2 100 oriented films on no-rolled Hastelloy C276[J]. Chemistry of Materials,2001,13(12):4402-4404. [22] KIM H J, JOO J, JI B K, et al. Deposition of CeO2 buffer layers for YBCO coated conductors on biaxially textured Ni substrates by MOCVD technique[J]. IEEE Transactions on Applied Superconductivity,2003,13(2):2555-2558.

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备注/Memo

备注/Memo:
收稿日期:2021-07-30基金项目:国家自然科学基金(51972241);武汉工程大学第十二届研究生教育创新基金(CX2020159)作者简介:陈志杰,硕士研究生。E-mail:332138561@qq.com*通讯作者:赵 培,博士,教授。E-mail:zhaopei410@163.com引文格式:陈志杰,潘天宇,徐源来,等. 激光化学气相沉积法制备多层氧化铈缓冲层薄膜[J]. 武汉工程大学学报,2022,44(1):42-47.
更新日期/Last Update: 2022-03-01