|本期目录/Table of Contents|

[1]熊礼威,崔晓慧,汪建华,等.基片温度对纳米金刚石薄膜掺硼的影响[J].武汉工程大学学报,2014,(03):33-37.[doi:103969/jissn16742869201403007]
　XIONG Li wei,CUI Xiao hui,WANG Jian hua,et al.Influence of substrate temperature on borondoping of nanocrystalline diamond films[J].Journal of Wuhan Institute of Technology,2014,(03):33-37.[doi:103969/jissn16742869201403007]
点击复制

基片温度对纳米金刚石薄膜掺硼的影响(/HTML)
分享到：

《武汉工程大学学报》[ISSN:1674-2869/CN:42-1779/TQ]

卷:
期数:
2014年03期
页码:
33-37
栏目:
材料科学与工程
出版日期:
2014-03-31

文章信息/Info

Title:
Influence of substrate temperature on borondoping of nanocrystalline diamond films
文章编号:
16742869(2014)03003305
作者:
熊礼威1; 2; 崔晓慧1; 2; 汪建华1; 2; 龚国华1; 2; 邹伟1; 2
1．武汉工程大学材料科学与工程学院，湖北 武汉 430074;2.湖北省等离子体化学与新材料重点实验室(武汉工程大学)，湖北 武汉 430074
Author(s):
XIONG Liwei1; 2; CUI Xiaohui1; 2; WANG Jianhua1; 2; GONG Guohua1; 2; ZOU Wei1; 2
1.School of Material Science and Engineering,Wuhan Institute of Technology,Wuhan 430074,China;2.Hubei Provincial Key Laboratory of Plasma Chemistry & Advanced Materials(Wuhan Institute of Technology),Wuhan 430074,China
关键词:
纳米金刚石薄膜; 掺硼; 化学气相沉积
Keywords:
nanocrystalline diamond films; boron doping; microwave plasma enhanced chemical vapor deposition
分类号:
O484.1
DOI:
103969/jissn16742869201403007
文献标志码:
A
摘要:
采用微波等离子体化学气相沉积法，以氢气稀释的乙硼烷为硼源进行了纳米金刚石（NCD）薄膜的生长过程掺硼，研究了基片温度对掺硼NCD薄膜晶粒尺寸、表面粗糙度、表面电阻和硼原子浓度的影响.利用扫描电子显微镜和原子力显微镜观察NCD薄膜的表面形貌，并通过Imager软件对原子力显微镜数据进行分析获得薄膜的表面粗糙度及平均晶粒尺寸信息；采用四探针测量掺硼NCD薄膜的表面方块电阻，利用二次离子质谱仪对掺杂后NCD薄膜表面区域的硼原子浓度进行测量.实验结果表明，较高的基片温度有利于提高薄膜的导电能力，但随着基片温度的提高，NCD薄膜的平均晶粒尺寸和表面粗糙度逐渐增大；此外，当反应气体中的乙硼烷浓度一定时，掺杂后NCD薄膜的表面硼原子浓度随基片温度升高存在一个饱和值.在所选乙硼烷浓度为0.01%的条件下，基片温度在700 ℃左右可以在保证薄膜表面电性能的基础上保持较好的表面形貌.
Abstract:
Nanocrystalline diamond (NCD) films were boron doped by microwave plasma enhanced chemical vapor deposition method using hydrogen diluted diborane as boron source.The influences of substrate temperature on grain size,surface roughness,surface resistance and boron atom concentration of borondoped NCD films were researched.Scanning electron microscope and atomic force microscope (AFM) were used to observe the surface morphology of borondoped NCD films,while the grain size and surface roughness information were obtained by disposing the AFM data using Imager software.Four point probe was used to detect the surface resistance and secondary ion mass spectrometer was utilized to test the boron atom concentration.Results show that higher substrate temperature is propitious to enhance the electrical conductivity,but it still leads to big grains and rough surface.In addition,there is a saturated boron atom concentration during the rising of substrate temperature when the diborane concentration is confirmed.In this work,to obtain good electrical properties and smooth uniform surface,it’s better to maintain substrate temperature at 700℃ when the diborane concentration is confirmed at 0.01%.

参考文献/References:

［1］WANG S G,ZHANG Q,YOON S F,et al.Preparation and electron field emission properties of nanodiamond films［J］.Materials Letters,2002,56:948951.［2］ZIMMERMANN T,KUBOVIC M,DENISENKO A,et al.Ultrananocrystalline/single crystal diamond heterostructure diode［J］.Diamond and Related Materials,2005,14:416420.［3］ASKARI S J,CHEN G C,AKHTAR F,et al.Adherent and low friction nanocrystalline diamond film grown on titanium using microwave CVD plasma［J］.Diamond and Related Materials,2008,17:294299.［4］SUMIYA H,IRIFUNE T.Indentation hardness of nanopolycrystalline diamond prepared from graphite by direct conversion［J］.Diamond and Related Materials,2004,13:17711776.［5］HAJJI H E,DENISENKO A,KAISER A.Diamond MISFET based on boron deltadoped channel［J］.Diamond and Related Materials,2008,17:12591263.［6］POTOCKY S,KROMKA A,Potmesil J,et al.Investigation of nanocrystalline diamond films grown on silicon and glass at substrate temperature below 400 ℃［J］.Diamond and Related Materials,2007,16:744747.［7］ASKARI S J,AKHTAR F,CHEN G C,et al.Synthesis and characterization of nanocrystalline CVD diamond film on pure titanium using Ar/CH4/H2 gas mixture［J］.Materials Letters,2007,61:21392142.［8］TANG C J,PEREIRA S M S,FERNANDES A J S,et al.Synthesis and structural characterization of highly <1 0 0>oriented {1 0 0}faceted nanocrystalline diamond films by microwave plasma chemical vapor deposition［J］.Journal of Crystal Growth,2009,311:22582264.［9］BRAGA N A,CAIRO C A A,ALMEIDA E C,et al.From micro to nanocrystalline transition in the diamond formation on porous pure titanium［J］.Diamond and Related Materials,2008,17:18911896.［10］JEEDIGUNTA S,XU Z Q,HIRAI M,et al.Effects of plasma treatments on the nitrogen incorporated nanocrystalline diamond films［J］.Diamond and Related Materials,2008,17:19941997.［11］STACEY A,AHARONOVICH I,PRAWER S,et al.Controlled synthesis of high quality micro/nanodiamonds by microwave plasma chemical vapor deposition［J］.Diamond and Related Materials,2009,18:5155.［12］TSUBOUCHI N,OGURA M,MIZUOCHI N,et al.Electrical properties of a B doped layer in diamond formed by hot B implantation and hightemperature annealing［J］.Diamond and Related Materials,2009,18:128131.［13］熊礼威，汪建华，满卫东，等.基片温度对金刚石厚膜生长的影响［J］，武汉工程大学学报，2008，30（1）：8386.XIONG Liwei,WANG Jianhua,MAN Weidong,et al.Study on the influence of growth temperature on the deposition of diamond thick films by MPCVD［J］.Journal of Wuhan Institute of Technology,2008,30(1):8386.（in Chinese)

相似文献/References:

[1]江川,汪建华,熊礼威,等.基片温度对纳米金刚石薄膜制备的影响[J].武汉工程大学学报,2012,(4):39.
　JIANG Chuan,WANG Jian\|hua,XIONG Li\|wei,et al.Influence of substrate temperature on preparation of nano\|crystalline diamond films[J].Journal of Wuhan Institute of Technology,2012,(03):39.
[2]熊礼威,崔晓慧,汪建华,等.基片温度对纳米金刚石薄膜掺硼的影响*[J].武汉工程大学学报,2014,(03):16.
　. School of Material Science and Engineering,Wuhan Institute of Technology,Wuhan 007,et al.Influence of substrate temperature on boron-doping of nano-crystalline diamond films[J].Journal of Wuhan Institute of Technology,2014,(03):16.

备注/Memo

备注/Memo:
收稿日期：20140124基金项目：国家自然科学基金项目（11175137）；湖北省教育厅科学技术研究项目（Q20121501）；武汉工程大学科学研究基金（11111051）作者简介：熊礼威（1983），男，湖北仙桃人，博士，硕士研究生导师.研究方向：低温等离子体技术及新型功能材料制备.
更新日期/Last Update: 2014-04-18